डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRLM120A | HEXFET Power MOSFET Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max. |
International Rectifier |
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IRLM120A | HEXFET Power MOSFET | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |