IRG8P25N120KD-EPbF डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IRG8P25N120KD-EPbF | INSULATED GATE BIPOLAR TRANSISTOR IRG8P25N120KDPbF IRG8P25N120KD-EPbF
VCES = 1200V IC = 25A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ |
 International Rectifier |
|
| IRG8P25N120KD-EPbF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |