डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRG7PSH73K10PbF | INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 μS short Circuit SOA • Square RBSOA • 100% of The |
International Rectifier |
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IRG7PSH73K10PbF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |