IRG7PSH54K10DPbF डाटा शीट PDF( Datasheet )

डेटा पत्रक ( Datasheet PDF )

भाग संख्या	विवरण	मैन्युफैक्चरर्स	PDF
IRG7PSH54K10DPbF	Insulated Gate Bipolar Transistor IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 65A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.9V @ IC = 50A G E C C G	International Rectifier	PDF
IRG7PSH54K10DPbF	Insulated Gate Bipolar Transistor	International Rectifier	PDF

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