डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRG4PH40UD2-E | Insulated Gate Bipolar Transistor PD - 96781
IRG4PH40UD2-E
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast CoPack IGBT
VCES = 1200V
UltraFast IGBT optimized for high operating frequencies up to 2 |
IRF |
|
IRG4PH40UD2-EP | Insulated Gate Bipolar Transistor PD - 95239
IRG4PH40UD2-EP
UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use i |
IRF |
www.DataSheet.in | 2017 | संपर्क |