डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRG4PH40U | INSULATED GATE BIPOLAR TRANSISTOR PD - 91612C
IRG4PH40U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides t |
International Rectifier |
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IRG4PH40UD | INSULATED GATE BIPOLAR TRANSISTOR PD- 91621B
IRG4PH40UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant |
International Rectifier |
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IRG4PH40UD2 | Insulated Gate Bipolar Transistor PD - 94739
IRG4PH40UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant |
IRF |
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IRG4PH40UD2-E | Insulated Gate Bipolar Transistor PD - 96781
IRG4PH40UD2-E
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast CoPack IGBT
VCES = 1200V
UltraFast IGBT optimized for high operating frequencies up to 2 |
IRF |
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IRG4PH40UD2-EP | Insulated Gate Bipolar Transistor PD - 95239
IRG4PH40UD2-EP
UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use i |
IRF |
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IRG4PH40UD2PBF | Insulated Gate Bipolar Transistor PD - 95570
IRG4PH40UD2PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resona |
IRF |
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IRG4PH40UDPbF | INSULATED GATE BIPOLAR TRANSISTOR PD- 95188A
IRG4PH40UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE Features
C
UltraFast: Optimized for high operating frequencies up to 40 kHz in hard sw |
International Rectifier |
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