IRFZ34 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IRFZ34 | Power MOSFET $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Tempera |
 Fairchild Semiconductor |
|
| IRFZ34 | (IRFZ30 / IRFZ34) N-Channel Power MOSFET www.DataSheet4U.com
|
 Samsung Electronics |
|
| IRFZ34 | Power MOSFET www.DataSheet4U.com
|
 International Rectifier |
|
| IRFZ34 | Power MOSFET www.vishay.com
IRFZ34
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
46 11 22 Singl |
 Vishay |
|
| IRFZ34A | Power MOSFET $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Tempera |
Fairchild Semiconductor |
|
| IRFZ34A | Power MOSFET
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([WHQGHGýý6 |
Samsung Electronics |
|
| IRFZ34E | Power MOSFET l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
G
l Ease of Paralleling
Description
Fifth Generation HEXFETs from Internati |
International Rectifier |
शेयर लिंक :
www.DataSheet.in | 2017 | संपर्क |