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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFZ24N | N-channel enhancement mode TrenchMOS transistor www.DataSheet4U.com
Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor |
NXP |
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IRFZ24N | Power MOSFET www.DataSheet4U.com
PD - 91354A
IRFZ24N
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 55V
G S
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International Rectifier |
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IRFZ24N | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ24N
FEATURES ·Drain Current –ID=17A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 55V(Min) ·Static Drain-Source On-Resistan |
Inchange Semiconductor |
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IRFZ24NL | Power MOSFET www.DataSheet4U.com
PD - 9.1355B
IRFZ24NS/L
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switch |
International Rectifier |
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IRFZ24NL | Power MOSFET IRFZ24NS/NL
Power MOSFET VDSS = 55V, RDS(on) = 0.07 mohm, ID = 17 A
D
N Channel
G
S Symbol
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Symbol
Test Conditions
Value M |
TRANSYS |
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IRFZ24NLPBF | HEXFET Power MOSFET www.DataSheet4U.com
PD - 95147
IRFZ24NS/LPbF
l l l l l l l
Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche |
International Rectifier |
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IRFZ24NLPbF | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-262(DPAK) packaging ·Surface mount ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable |
INCHANGE |
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