डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFZ14 | Power MOSFET $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Tempera |
Fairchild Semiconductor |
|
IRFZ14 | HEXFET Power MOSFET |
International Rectifier |
|
IRFZ14 | Power MOSFET Power MOSFET
IRFZ14, SiHFZ14
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
11 3.1 5.8 Single
0.20
D
TO-220AB
G
S D G
S N-Channel M |
Vishay |
|
IRFZ14A | Power MOSFET
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([W |
Samsung |
|
IRFZ14L | Advanced Process Technology / Surface Mount www.DataSheet4U.com
PD - 9.890A
IRFZ14S/L
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Surface Mount (IRFZ14S) Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching
D |
International Rectifier |
|
IRFZ14L | Power MOSFET IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
60 VGS = 10 V
11
Qgs (nC)
3.1
Qgd (nC)
5.8
Configuration
Single
0.20
I2PAK (TO- |
Vishay |
|
IRFZ14S | Advanced Process Technology / Surface Mount www.DataSheet4U.com
PD - 9.890A
IRFZ14S/L
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Surface Mount (IRFZ14S) Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching
D |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |