डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFU310 | Power MOSFET |
International Rectifier |
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IRFU310 | Power MOSFET www.vishay.com
IRFR310, IRFU310, SiHFR310, SiHFU310
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)
D
D G
GS
GD S
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs |
Vishay Siliconix |
|
IRFU310 | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFU310
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤3.6Ω @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum L |
INCHANGE |
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IRFU310A | Power MOSFET www.DataSheet4U.com
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Low |
Fairchild Semiconductor |
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IRFU310B | 400V N-Channel MOSFET IRFR310B / IRFU310B
November 2001
IRFR310B / IRFU310B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, pl |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |