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IRFU220 | N-Channel Power MOSFETs IRFR220, IRFU220
Data Sheet July 1999 File Number
2410.2
4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced powe |
Intersil Corporation |
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IRFU220 | Power MOSFET www.vishay.com
IRFR220, IRFU220, SiHFR220, SiHFU220
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)
D
D G
GS
GD S
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs ( |
Vishay Siliconix |
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IRFU220 | Power MOSFET |
International Rectifier |
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IRFU220 | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFU220
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤0.8Ω @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum L |
INCHANGE |
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IRFU220A | Advanced Power MOSFET www.DataSheet4U.com
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 |
Fairchild Semiconductor |
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IRFU220B | 200V N-Channel MOSFET IRFR220B / IRFU220B
November 2001
IRFR220B / IRFU220B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, pl |
Fairchild Semiconductor |
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IRFU220B | N-Channel MOSFET Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-251(IPAK) packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-t |
INCHANGE |
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