IRFR430 डाटा शीट PDF( Datasheet )

$GYDQFHG 3RZHU 026)(7 IRFR430 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage

www.DataSheet4U.com PD - 94356A SMPS MOSFET IRFR430A IRFU430A HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching l VDSS 500V RDS

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.7Ω(Max) ·100% avalanche tested ·Minimu

SMPS MOSFET PD -95076B Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching l Lead-Free l IRFR430APbF IRFU430APbF RDS(on) max 1.7Ω HEXFET® Power MOSFET

www.DataSheet4U.com IRFR430B / IRFU430B November 2001 IRFR430B / IRFU430B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchil