IRFR410 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. T

www.DataSheet4U.com PD - 94728 AUTOMOTIVE MOSFET IRFR4104 IRFU4104 HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast

isc N-Channel MOSFET Transistor IRFR4104, IIRFR4104 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev

PD - 95425B IRFR4104PbF IRFU4104PbF HEXFET® Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up t

www.DataSheet4U.com PD - 91302C IRFR/U4105 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount (IRFR4105) Straight Lead (IRFU4105) Fast Switching Fully Avalanche Rated D VDSS = 55V G S R

isc N-Channel MOSFET Transistor IRFR4105, IIRFR4105 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤45mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devi

PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance l Surface Mount (IRFR4105) l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET® Power MOSFET D VD