डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFR3607 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRFR3607, IIRFR3607
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤9mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic |
INCHANGE |
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IRFR3607PBF | Power MOSFET Applications l High Efficiency Synchronous Rectification in
SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
Benefits l Improved Gate, Avalanche and |
International Rectifier |
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IRFR3607PbF | N-Channel MOSFET Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-252(DPAK) packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-t |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |