डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFR3410 | Power MOSFET Applications l High frequency DC-DC converters
Benefits l Low Gate-to-Drain Charge to Reduce
Switching Losses l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See App. Note AN1001 |
International Rectifier |
|
IRFR3410 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRFR3410, IIRFR3410
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤39mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devi |
INCHANGE |
|
IRFR3410PBF | HEXFET Power MOSFET PD - 95514A
IRFR3410PbF IRFU3410PbF
HEXFET® Power MOSFET
Applications High frequency DC-DC converters l Lead-Free
l
VDSS
100V
RDS(on) max
39mΩ
ID
31A
Benefits Low Gate-to-Drain Charge to Reduce Switch |
International Rectifier |
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