IRFR330 डाटा शीट PDF( Datasheet )

$GYDQFHG 3RZHU 026)(7 IRFR330 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage

PD - 9.1642A IRFR/U3303 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount (IRFR3303) Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS =

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IRFR330B / IRFU330B November 2001 IRFR330B / IRFU330B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, pl