डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFR1018E | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRFR1018E, IIRFR1018E
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤8.4mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d |
INCHANGE |
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IRFR1018EPbF | Power MOSFET Applications l High Efficiency Synchronous Rectification in
SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and D |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |