IRFP9140N डाटा शीट PDF( Datasheet )

PD - 9.1492A PRELIMINARY l l l l l l IRFP9140N HEXFET® Power MOSFET D Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated VDSS = -10

isc P-Channel MOSFET Transistor IRFP9140N，IIRFP9140N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.117Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated l Lead-Free G Description Fifth Generation HEXFETs from International R