IRFP9140 डाटा शीट PDF( Datasheet )

IRFP9140 Data Sheet July 1999 File Number 2292.4 19A, 100V, 0.200 Ohm, P-Channel Power MOSFET This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the

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www.vishay.com IRFP9140 Vishay Siliconix Power MOSFET TO-247AC S G S D G D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (max.) (nC) Qgs (nC) Qgd (nC) Configuration -100 VGS = -10 V 61 14 2

PD - 9.1492A PRELIMINARY l l l l l l IRFP9140N HEXFET® Power MOSFET D Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated VDSS = -10

isc P-Channel MOSFET Transistor IRFP9140N，IIRFP9140N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.117Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated l Lead-Free G Description Fifth Generation HEXFETs from International R