IRFP352 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching ·100% avalan

~D~~ FIELD EFFECT POVVER TRANSISTOR IRFP352,353 13 AMPERES 400, 350 VOLTS ROS(ON) = 0.4 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low o

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP352(R) FEATURES ·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Res