IRFP140N डाटा शीट PDF( Datasheet )

PD - 91343B IRFP140N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) = 0.052Ω

IRFP140N TM Data Sheet March 2000 File Number 4841 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10

isc N-Channel MOSFET Transistor IRFP140N，IIRFP140N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤52mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev

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