IRFP140 डाटा शीट PDF( Datasheet )

Power MOSFET IRFP140, SiHFP140 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 72 11 32 Single 0.077 D TO-247AC S D G G S N-Channel M

iscN-Channel MOSFET Transistor IRFP140 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤77mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum L

PD - 95810 AUTOMOTIVE MOSFET IRFP1405 HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanch

isc N-Channel MOSFET Transistor IRFP1405，IIRFP1405 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de

PD - 95509A IRFP1405PbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This