IRFIZ48 डाटा शीट PDF( Datasheet )

iscN-Channel MOSFET Transistor IRFIZ48G ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤18mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum

Power MOSFET IRFIZ48G, SiHFIZ48G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 110 29 36 Single 0.018 D TO-220 FULLPAK G GDS S N-Cha

PD 9.1407 PRELIMINARY IRFIZ48N HEXFET® Power MOSFET D l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated U G