IRFIZ24G डाटा शीट PDF( Datasheet )

iscN-Channel MOSFET Transistor IRFIZ24G ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.1Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-t

Power MOSFET IRFIZ24G, SiHFIZ24G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 25 5.8 11 Single 0.10 D TO-220 FULLPAK G GDS S N-Chan