डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFIBE30G | Power MOSFET |
International Rectifier |
|
IRFIBE30G | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFIBE30G
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =3.0Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-L |
INCHANGE |
|
IRFIBE30G | Power MOSFET IRFIBE30G, SiHFIBE30G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
800
VGS = 10 V
3.0
78
9.6
45
Single
TO-220 FULLPAK
D
G
GDS
S |
Vishay |
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