IRFIBE20G डाटा शीट PDF( Datasheet )

iscN-Channel MOSFET Transistor IRFIBE20G ·FEATURES ·Low drain-source on-resistance: RDS(ON) =6.5Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-

IRFIBE20G, SiHFIBE20G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 6.5 38 5.0 21 Single D TO-220 FULLPAK GDS G S N

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