IRFIBC20 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IRFIBC20 | Power MOSFET |
 International Rectifier |
|
| IRFIBC20G | Power MOSFET |
International Rectifier |
|
| IRFIBC20G | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFIBC20G
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 4.4Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to- |
 INCHANGE |
|
| IRFIBC20G | Power MOSFET IRFIBC20G, SiHFIBC20G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600
VGS = 10 V
4.4
18
3.0
8.9
Single
TO-220 FULLPAK
D
G
GDS
|
 Vishay |
शेयर लिंक :
[1]
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