डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFIB6N60A | Power MOSFET PD - 91813
SMPS MOSFET
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in |
International Rectifier |
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IRFIB6N60A | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFIB6N60A
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =0.75Ω (MAX) ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lo |
INCHANGE |
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IRFIB6N60A | Power MOSFET www.vishay.com
IRFIB6N60A, SiHFIB6N60A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
600 VGS = 10 V
49 13 20 Single
0.75
TO-220 FULLPAK
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Vishay |
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IRFIB6N60APBF | Power MOSFET www.DataSheet4U.com
SMPS MOSFET
PD - 94838
IRFIB6N60APbF
Rds(on) max
0.75Ω
HEXFET® Power MOSFET
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switchi |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |