डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFI9Z24N | Power MOSFET l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l P-Channel
G
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs f |
International Rectifier |
|
IRFI9Z24N | Power MOSFET | International Rectifier |
|
IRFI9Z24G | HEXFET Power MOSFET | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |