डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFI9540N | Power MOSFET PRELIMINARY
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l P-Channel
G
l Fully Avalanche Rated
Description
Fifth Generat |
International Rectifier |
|
IRFI9540G | Power MOSFET | International Rectifier |
|
IRFI9540N | Power MOSFET | International Rectifier |
|
IRFI9540G | Power MOSFET | Vishay |
www.DataSheet.in | 2017 | संपर्क |