डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFI9520N | Power MOSFET PRELIMINARY
l Advanced Process Technology
l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l P-Channel
l Fully Avalanche Rated Description
Fifth Generation HEXFET |
International Rectifier |
|
IRFI9520G | HEXFET Power MOSFET | International Rectifier |
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IRFI9520GPBF | HEXFET Power MOSFET | International Rectifier |
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IRFI9520N | Power MOSFET | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |