डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFI644 | 250V N-Channel MOSFET IRFW644B / IRFI644B
November 2001
IRFW644B / IRFI644B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, pl |
Fairchild Semiconductor |
|
IRFI644 | Power MOSFET |
International Rectifier |
|
IRFI644A | Power MOSFET www.DataSheet4U.com
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Low |
Fairchild Semiconductor |
|
IRFI644B | 250V N-Channel MOSFET IRFW644B / IRFI644B
November 2001
IRFW644B / IRFI644B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, pl |
Fairchild Semiconductor |
|
IRFI644B | N-Channel MOSFET IRFW644B / IRFI644B
November 2001
IRFW644B / IRFI644B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, pl |
Fairchild Semiconductor |
|
IRFI644G | Power MOSFET Power MOSFET
IRFI644G, SiHFI644G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
250 VGS = 10 V
68 11 35 Single
0.28
TO-220 FULLPAK
D
G
GDS
S N-Cha |
Vishay |
|
IRFI644G | Power MOSFET |
International Rectifier |
www.DataSheet.in | 2017 | संपर्क |