IRFI4510G डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRFI4510G,IIRFI4510G ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 13.5mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-

PD - 97790 IRFI4510GPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Cir