डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFI3710 | Power MOSFET PRELIMINARY
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs f |
International Rectifier |
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IRFI3710 | Power MOSFET | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |