IRFF220 डाटा शीट PDF( Datasheet )

IRFF220 Data Sheet March 1999 File Number 1889.3 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39) Product Summary Part Number BVDSS IRFF220 200V RDS(on) ID 0.80 3.5A PD-90427E IRFF220 JANTX2N6790 JANTXV2N6790 200V

~D~[P~U FIELD EFFECT POVVER TRANSISTOR IRFF220,221 3.5 AMPERES 200, 150 VOLTS ROS(ON) =0.8 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to