IRFD310 डाटा शीट PDF( Datasheet )

IRFD310 Data Sheet July 1999 File Number 2324.4 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs

HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements PD -9.1225 IRFD310 VDSS = 400V RDS(on) =