IRFD1Z2 डाटा शीट PDF( Datasheet )

Semiconductor July 1998 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs Features • 0.4A and 0.5A, 60V and 100V • rDS(ON) = 2.4Ω and 3.2Ω • SO

~D~·~~U FIELD EFFECT POVVER TRANSISTOR IRFD1Z2,1Z3 0.5 AMPERES 100, 60 VOL1S ROS{ON) = 2.4 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve l