IRFBF30 डाटा शीट PDF( Datasheet )

Power MOSFET IRFBF30, SiHFBF30 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 900 VGS = 10 V 78 10 42 Single 3.7 D TO-220AB G S D G ORDERING INFOR

iscN-Channel MOSFET Transistor IRFBF30 ·FEATURES ·Low drain-source on-resistance: RDS(ON) =3.7Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot