IRFBC40A डाटा शीट PDF( Datasheet )

PD -91885A SMPS MOSFET IRFBC40A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Sim

www.vishay.com IRFBC40A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 1.2 42 10

iscN-Channel MOSFET Transistor IRFBC40A ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-L

SMPS MOSFET PD - 94986 IRFBC40APbF HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg

PD- 91897A SMPS MOSFET IRFBC40AS HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l VDSS 600V Rds(on) max 1.2 Ω ID 6.2A B

IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 600 VGS = 10 V 42 Qgs (nC) 10 Qgd (nC) 20 Configuration Single D D2PAK (TO-263) 1.2 G GD S

iscN-Channel MOSFET Transistor IRFBC40AS ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-