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IRFBC30 | TO-220C N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFBC30
FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology |
Inchange Semiconductor |
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IRFBC30 | N-Channel Power MOSFET ®
IRFBC30
N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESH ™ ΙΙ MOSFET
TYPE IRFBC30
s s s s s
V DSS 600 V
R DS(on) < 2.2 Ω
ID 3.6 A
TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100 |
STMicroelectronics |
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IRFBC30 | Power MOSFET |
International Rectifier |
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IRFBC30 | Power MOSFET www.vishay.com
IRFBC30
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
600
VGS = 10 V
2.2
31
4.6 |
Vishay |
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IRFBC30 | TO-220 N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFBC30
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =2.2Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot |
INCHANGE |
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IRFBC30A | Power MOSFET PD- 91889A
SMPS MOSFET
IRFBC30A
HEXFET® Power MOSFET
Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching
l
VDSS
600V
Rds(on) max
2.2Ω
ID
3.6A
Benef |
International Rectifier |
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IRFBC30A | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFBC30A
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =2.2Ω (MAX) ·Enhancement mode:
Vth = 2 to 4.5V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to- |
INCHANGE |
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