IRFBC20 डाटा शीट PDF( Datasheet )

iscN-Channel MOSFET Transistor IRFBC20 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 4.4Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lo

Power MOSFET IRFBC20, SiHFBC20 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 4.4 18 3.0 8.9 Single D TO-220AB G S D G S N-C

PD - 9.1014 PRELIMINARY l l l l l l l IRFBC20S/L HEXFET® Power MOSFET D Surface Mount (IRFBC20S) Low-profile through-hole (IRFBC20L) Available in Tape & Reel (IRFBC20S) Dynamic dv/dt Rating 150°C Operating

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 18 3.0 8.9 Single D 600 4.4 • Halogen-

PD - 9.1014 PRELIMINARY l l l l l l l IRFBC20S/L HEXFET® Power MOSFET D Surface Mount (IRFBC20S) Low-profile through-hole (IRFBC20L) Available in Tape & Reel (IRFBC20S) Dynamic dv/dt Rating 150°C Operating

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 18 3.0 8.9 Single D 600 4.4 • Halogen-