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IRFB9N60A | Power MOSFET www.vishay.com
IRFB9N60A
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
600 VGS = 10 V
49 13 20 Sin |
Vishay |
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IRFB9N60A | Power MOSFET PD - 91811
IRFB9N60A
HEXFET® Power MOSFET
l l l l l
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements
D
VDSS = 600V
G S
RDS(on) = 0.75Ω ID = 9.2 |
International Rectifier |
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IRFB9N60A | N-Channel MOSFET iscN-Channel MOSFET Transistor
IRFB9N60A
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =0.75Ω (MAX) ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot |
INCHANGE |
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