IRFB812 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRFB812，IIRFB812 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.2Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot var

PD -97693 IRFB812PbF Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications HEXFET® Power MOSFET VDSS RDS(on) typ. Trr typ. ID 500V 1.75Ω 75ns 3.6A