IRFB5620 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRFB5620，IIRFB5620 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤72.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot

PD - 96174 DIGITAL AUDIO MOSFET Features • Key Parameters Optimized for Class-D Audio Amplifier Applications • Low RDSON for Improved Efficiency • Low QG and QSW for Better THD and Improved Efficiency �