IRFB5615 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRFB5615，IIRFB5615 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤39mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot va

DIGITAL AUDIO MOSFET PD - 96173 IRFB5615PbF Features • Key Parameters Optimized for Class-D Audio Amplifier Applications • Low RDSON for Improved Efficiency • Low QG and QSW for Better THD and Improved