डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFB4410 | HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and D |
International Rectifier |
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IRFB4410 | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFB4410,IIRFB4410
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤10mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested |
INCHANGE |
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IRFB4410PbF | HEXFET Power MOSFET PD - 95707E
IRFB4410PbF IRFS4410PbF IRFSL4410PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency |
International Rectifier |
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IRFB4410Z | Power MOSFET IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
|
International Rectifier |
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IRFB4410Z | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFB4410Z,IIRFB4410Z
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤9.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche test |
INCHANGE |
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IRFB4410ZG | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRFB4410ZG,IIRFB4410ZG
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤9.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-L |
INCHANGE |
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IRFB4410ZGPbF | Power MOSFET PD - 96213
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
Benefits l Improved Gate, |
International Rectifier |
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