IRFB4229 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRFB4229，IIRFB4229 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤46mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot va

PD - 97078A IRFB4229PbF Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Su