IRFB4212 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRFB4212，IIRFB4212 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤72.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot

PD - 96918A DIGITAL AUDIO MOSFET Features • Key parameters optimized for Class-D audio amplifier applications • Low RDSON for improved efficiency • Low QG and QSW for better THD and improved efficiency