IRFB3407Z डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IRFB3407Z，IIRFB3407Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot

IRFB3407ZPbF Applications HEXFET® Power MOSFET l Battery Management l High Speed Power Switching D VDSS RDS(on) typ. 75V 5.0mΩ l Hard Switched and High Frequency Circuits G max. ID (Silicon Limited)