डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFB260 | Power MOSFET PD - 94270
SMPS MOSFET
IRFB260N
HEXFET® Power MOSFET
l
Applications High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.040Ω
ID
56A
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l |
International Rectifier |
|
IRFB260N | Power MOSFET PD - 94270
SMPS MOSFET
IRFB260N
HEXFET® Power MOSFET
l
Applications High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.040Ω
ID
56A
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l |
International Rectifier |
|
IRFB260N | N-Channel MOSFET isc N-Channel MOSFET Transistor IRFB260N,IIRFB260N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤40mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot var |
INCHANGE |
|
IRFB260NPBF | HEXFET Power MOSFET PD - 95473
SMPS MOSFET
IRFB260NPbF
l l
HEXFET® Power MOSFET
Applications High frequency DC-DC converters Lead-Free
VDSS
200V
RDS(on) max
0.040Ω
ID
56A
Benefits Low Gate-to-Drain Charge to Reduce Swit |
International Rectifier |
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